CY7C1515JV18-300BZI Cypress Semiconductor Corp, CY7C1515JV18-300BZI Datasheet - Page 11

• Manufacturer Part Number: CY7C1515JV18-300BZI
• Description: IC SRAM 72MBIT 300MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1515JV18-300BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (2M x 36)
• Speed: 300MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Write Cycle Descriptions
The write cycle description table for CY7C1511JV18 and CY7C1513JV18 follows.
Write Cycle Descriptions
The write cycle description table for CY7C1526JV18 follows.
Note
Document Number: 001-12560 Rev. *C
10. Is based on a write cycle that was initiated in accordance with the
BWS
NWS
BWS
H
H
H
H
different portions of a write cycle, as long as the setup and hold requirements are achieved.
H
H
L
L
L
L
L
L
0
0
0
/
BWS
NWS
L–H
L–H
H
H
H
H
L
L
L
L
K
–
–
1
1
/
L–H
L–H
L–H
L–H
K
–
–
–
–
L–H
L–H
K
–
–
L–H During the data portion of a write sequence:
L–H During the data portion of a write sequence:
L–H No data is written into the devices during this portion of a write operation.
L-H During the data portion of a write sequence:
K
–
–
–
–
During the Data portion of a write sequence, the single byte (D
During the Data portion of a write sequence, the single byte (D
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
During the data portion of a write sequence:
CY7C1511JV18 − both nibbles (D
CY7C1513JV18 − both bytes (D
CY7C1511JV18 − both nibbles (D
CY7C1513JV18 − both bytes (D
During the data portion of a write sequence:
CY7C1511JV18 − only the lower nibble (D
CY7C1513JV18 − only the lower byte (D
CY7C1511JV18 − only the lower nibble (D
CY7C1513JV18 − only the lower byte (D
During the data portion of a write sequence:
CY7C1511JV18 − only the upper nibble (D
CY7C1513JV18 − only the upper byte (D
CY7C1511JV18 − only the upper nibble (D
CY7C1513JV18 − only the upper byte (D
No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions
[2, 10]
[17:0]
[17:0]
[7:0]
[7:0]
) are written into the device.
) are written into the device.
) are written into the device.
) are written into the device.
[8:0]
[8:0]
[17:9]
[17:9]
[3:0]
[3:0]
[7:4]
[7:4]
Comments
table. NWS
) is written into the device, D
) is written into the device, D
Comments
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
CY7C1513JV18, CY7C1515JV18
CY7C1511JV18, CY7C1526JV18
[2, 10]
0
, NWS
1
, BWS
[8:0]
[8:0]
) is written into the device.
) is written into the device.
0
, BWS
1
, BWS
[17:9]
[17:9]
[8:0]
[8:0]
[7:4]
[7:4]
[3:0]
[3:0]
2
, and BWS
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
3
can be altered on
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