MT47H32M8BP-37E:B TR Micron Technology Inc, MT47H32M8BP-37E:B TR Datasheet - Page 110

IC DDR2 SDRAM 256MBIT 60FBGA

MT47H32M8BP-37E:B TR

Manufacturer Part Number
MT47H32M8BP-37E:B TR
Description
IC DDR2 SDRAM 256MBIT 60FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H32M8BP-37E:B TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (32M x 8)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1049-2
SELF REFRESH
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
The SELF REFRESH command is initiated when CKE is LOW. The differential clock
should remain stable and meet
refresh mode. The procedure for exiting self refresh requires a sequence of commands.
First, the differential clock must be stable and meet
prior to CKE going back to HIGH. Once CKE is HIGH (
with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com-
mands issued for
ments is used to apply NOP or DESELECT commands for 200 clock cycles before
applying any other command.
t
XSNR. A simple algorithm for meeting both refresh and DLL require-
110
t
CKE specifications at least 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
t
CK specifications at least 1 ×
t
CKE [MIN] has been satisfied
©2003 Micron Technology, Inc. All rights reserved.
t
CK after entering self
SELF REFRESH
t
CK

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