STGP35HF60W STMicroelectronics, STGP35HF60W Datasheet - Page 4

• Manufacturer Part Number: STGP35HF60W
• Description: IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
• Manufacturer: STMicroelectronics

Specifications of STGP35HF60W

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-220
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Electrical characteristics
2
4/13
Electrical characteristics
T
Table 4.
Table 5.
J
Symbol
V
Symbol
V
= 25 °C unless otherwise specified)
V
C
(BR)CES
C
C
Q
Q
CE(sat)
I
Q
I
GE(th)
GES
CES
oes
ies
res
ge
gc
g
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Collector-emitter
breakdown voltage
(V
Collector-emitter
saturation voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 023894 Rev 1
I
V
V
V
V
V
V
C
V
V
V
V
(see
GE
GE
GE
CE
CE
CE
GE
GE
CE
CE
= 1 mA
= 15 V, I
= 15V, I
= V
= 600 V
= 600 V,
= ±20 V
= 25 V, f = 1 MHz,
= 0
= 400 V, I
= 15 V,
Figure
GE
Test conditions
Test conditions
, I
C
C
C
16)
T
= 20 A,
= 20 A
= 1 mA
J
C
= 125 °C
= 20 A,
T
J
= 125 °C
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
-
-
2400
1.65
235
140
50
13
52
STGP35HF60W
± 100
5.75
250
2.5
1
-
-
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V