IXXN110N65C4H1 Ixys, IXXN110N65C4H1 Datasheet - Page 6

• Manufacturer Part Number: IXXN110N65C4H1
• Description: IGBT Modules 650V/234A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65C4H1

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.98 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227B-4
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
140
120
100
80
60
40
20
80
60
40
20
0
25
2
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
T
V
t
r i
J
CE
= 150ºC, V
= 400V
4
50
GE
Junction Temperature
t
d(on)
= 15V
T
6
J
Gate Resistance
- Degrees Centigrade
- - - -
75
I
R
C
G
= 110A
- Ohms
8
I
C
= 110A
R
V
100
t
r i
CE
G
= 2
= 400V
I
10
C
Ω
= 55A
, V
GE
125
= 15V
t
d(on)
I
12
C
= 55A
- - - -
150
14
100
90
80
70
60
50
40
30
20
10
50
46
42
38
34
30
26
130
110
90
70
50
30
10
55
T
Fig. 19. Inductive Turn-on Switching Times vs.
J
= 25ºC
60
R
V
t
r i
G
CE
= 2
= 400V
Ω
65
, V
GE
70
t
= 15V
d(on)
Collector Current
T
75
J
- - - -
= 150ºC
IXXN110N65C4H1
I
C
80
- Amperes
85
90
95
100
105
110
55
50
45
40
35
30
25