IXXH60N65B4 Ixys, IXXH60N65B4 Datasheet - Page 3

• Manufacturer Part Number: IXXH60N65B4
• Description: IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH60N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 116 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

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120
100
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0
0
7
0.5
8
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage vs.
1
9
1
1.5
Gate-to-Emitter Voltage
30A
10
V
2
1.5
CE
V
V
V
CE
GE
V
60A
GE
- Volts
GE
- Volts
= 15V
2.5
11
= 15V
- Volts
14V
13V
12V
14V
I
C
2
= 120A
3
12
3.5
2.5
J
J
13
= 150ºC
= 25ºC
4
T
J
= 25ºC
3
14
11V
10V
4.5
9V
8V
7V
13V
12V
11V
10V
9V
8V
7V
3.5
15
5
240
200
160
120
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
40
90
80
70
60
50
40
30
20
10
0
0
-50
4
0
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
= 15V
5
5
0
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
Junction Temperature
10
25
T
J
7
- Degrees Centigrade
I
V
C
CE
= 120A
50
I
V
C
GE
- Volts
V
I
= 60A
IXXH60N65B4
GE
C
15
8
- Volts
T
= 30A
J
= 15V
= - 40ºC
75
25ºC
14V
9
CE(sat)
100
20
13V
12V
10
on
125
11V
T
J
J
25
= 150ºC
= 25ºC
10V
11
150
9V
8V
7V
175
12
30