IXXH110N65C4 Ixys, IXXH110N65C4 Datasheet

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IXXH110N65C4

Manufacturer Part Number
IXXH110N65C4
Description
IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXH110N65C4

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.98 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
234 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
880 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247AD-3
Continuous Collector Current Ic Max
110 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
XPT
GenX4
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2013 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
CES
GES
sc
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V IGBT
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
GE
GE
CE
CE
G
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 110°C
= 25°C, 1ms
= 15V, V
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 110A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
= ±20V
GE
= 360V, T
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= V
= 0V
GE
GE
J
= 1MΩ
G
= 150°C
Preliminary Technical Information
= 2Ω
T
T
J
J
= 150°C
= 150°C
IXXH110N65C4
Min.
650
Characteristic Values
4.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
2.34
= 220
1.98
±20
±30
600
V
234
880
175
300
260
650
650
160
110
CES
10
6
±100
2.35
Max.
Nm/lb.in.
6.5
25
2 mA
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
CES
CE(sat)
G
C
E
= 650V
= 110A
= 30ns
≤ ≤ ≤ ≤ ≤ 2.35V
C
Tab = Collector
Tab
= Collector
DS100497A(02/13)

Related parts for IXXH110N65C4

IXXH110N65C4 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 110A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXH110N65C4 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 234 160 110 600 = 2Ω 220 G CM ≤ CES = 150° ...

Page 2

... CES 2.30 143 30 0. 2.90 130 43 0.77 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH110N65C4 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter ns Min. Max 4.7 A 2.2 1. 2.2 2 ...

Page 3

... T = 25º 220A 110A 55A IXXH110N65C4 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 220A C ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 150ºC 120 140 160 180 200 240 200 C ies 160 120 C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXXH110N65C4 Fig. 8. Gate Charge 325V 110A 10mA ...

Page 5

... I = 55A 100 125 150 170 120 100 150 80 130 60 40 110 100 105 110 IXXH110N65C4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 150º 25º ...

Page 6

... Ω 15V 400V 110A 55A 100 125 150 IXXH110N65C4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 25º 150º ...

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