IXXX160N65C4 Ixys, IXXX160N65C4 Datasheet - Page 6

• Manufacturer Part Number: IXXX160N65C4
• Description: IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXX160N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 290 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Package / Case: PLUS 247-3
• Continuous Collector Current Ic Max: 160 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
140
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
25
1
I
Fig. 18. Inductive Turn-on Switching Times vs.
t
T
V
Fig. 20. Inductive Turn-on Switching Times vs.
C
r i
J
CE
= 80A
= 150ºC, V
2
= 400V
50
3
GE
t
= 15V
d(on)
Junction Temperature
T
4
I
J
C
Gate Resistance
- - - -
- Degrees Centigrade
I
= 80A
75
C
= 40A
R
5
G
- Ohms
I
C
6
= 40A
100
t
R
V
r i
CE
G
= 1
= 400V
7
Ω
, V
GE
8
125
= 15V
t
d(on)
9
- - - -
10
150
140
120
100
80
60
40
20
0
60
55
50
45
40
35
30
25
120
100
80
60
40
20
0
40
R
V
t
Fig. 19. Inductive Turn-on Switching Times vs.
r i
CE
G
= 1
= 400V
Ω
50
, V
GE
= 15V
t
d(on)
60
Collector Current
- - - -
T
I
C
J
T
70
= 25ºC
- Amperes
J
= 150ºC
IXXK160N65C4
IXXX160N65C4
80
IXYS REF: IXX_160N65C4(E9)12-12-12
90
100
80
70
60
50
40
30
20