IXXX160N65C4 Ixys, IXXX160N65C4 Datasheet - Page 6
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IXXX160N65C4
Manufacturer Part Number
IXXX160N65C4
Description
IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet
1.IXXX160N65C4.pdf
(6 pages)
Specifications of IXXX160N65C4
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
290 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
940 W
Maximum Operating Temperature
+ 175 C
Package / Case
PLUS 247-3
Continuous Collector Current Ic Max
160 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
140
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
25
1
I
Fig. 18. Inductive Turn-on Switching Times vs.
t
T
V
Fig. 20. Inductive Turn-on Switching Times vs.
C
r i
J
CE
= 80A
= 150ºC, V
2
= 400V
50
3
GE
t
= 15V
d(on)
Junction Temperature
T
4
I
J
C
Gate Resistance
- - - -
- Degrees Centigrade
I
= 80A
75
C
= 40A
R
5
G
- Ohms
I
C
6
= 40A
100
t
R
V
r i
CE
G
= 1
= 400V
7
Ω
, V
GE
8
125
= 15V
t
d(on)
9
- - - -
10
150
140
120
100
80
60
40
20
0
60
55
50
45
40
35
30
25
120
100
80
60
40
20
0
40
R
V
t
Fig. 19. Inductive Turn-on Switching Times vs.
r i
CE
G
= 1
= 400V
Ω
50
, V
GE
= 15V
t
d(on)
60
Collector Current
- - - -
T
I
C
J
T
70
= 25ºC
- Amperes
J
= 150ºC
IXXK160N65C4
IXXX160N65C4
80
IXYS REF: IXX_160N65C4(E9)12-12-12
90
100
80
70
60
50
40
30
20