IXXH80N65B4 Ixys, IXXH80N65B4 Datasheet - Page 2

• Manufacturer Part Number: IXXH80N65B4
• Description: IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH80N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
ie
oes
res
on
of
on
off
thJC
thCS
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
= 80A, V
= 80A, V
= 80A, V
= 60A, V
= 25V, V
= 400V, R
= 400V, R
ADVANCE TECHNICAL INFORMATION
GE
GE
GE
CE
GE
= 15V, V
= 15V
= 15V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 3
= 3
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
Characteristic Values
19
Min.
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
2686
3.77
4.80
1.65
0.21
Typ.
1.20
176
120
120
127
31
98
22
57
38
90
63
30
86
65
CE
(clamp), T
Max.
1.80
0.24 °C/W
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXXH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXXH80N65B4
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
3 - Emitted
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216