IXXH60N65C4 Ixys, IXXH60N65C4 Datasheet - Page 6

• Manufacturer Part Number: IXXH60N65C4
• Description: IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH60N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 118 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
120
100
200
160
120
80
60
40
20
80
40
0
0
25
5
T
V
t
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
r i
J
CE
10
= 150ºC, V
= 400V
50
15
GE
t
= 15V
I
d(on)
20
C
Junction Temperature
= 30A
T
J
- - - -
Gate Resistance
- Degrees Centigrade
25
75
R
I
I
C
G
C
I
= 60A
C
= 30A
- Ohms
30
= 60A
100
35
R
V
t
r i
G
CE
= 5
= 400V
Ω
40
, V
GE
125
45
= 15V
t
d(on)
50
- - - -
150
55
110
90
70
50
30
10
46
42
38
34
30
26
22
200
160
120
80
40
0
30
R
V
T
t
r i
CE
J
Fig. 19. Inductive Turn-on Switching Times vs.
G
= 25ºC
= 5
= 400V
Ω
40
, V
GE
t
= 15V
d(on)
50
- - - -
Collector Current
T
J
= 150ºC
I
C
60
- Amperes
IXXH60N65C4
70
80
IXYS REF: IXX_60N65C4(E6) 9-14-12
90
50
45
40
35
30
25