SI8425DB-T1-E1 Vishay/Siliconix, SI8425DB-T1-E1 Datasheet - Page 7
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SI8425DB-T1-E1
Manufacturer Part Number
SI8425DB-T1-E1
Description
MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
Manufacturer
Vishay/Siliconix
Datasheet
1.SI8425DB-T1-E1.pdf
(11 pages)
Specifications of SI8425DB-T1-E1
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
- 0.9 V
Continuous Drain Current
- 9.3 A
Resistance Drain-source Rds (on)
23 mOhms at 4.5 V
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
MICRO FOOT 1.6 x 1.6
Fall Time
200 ns
Forward Transconductance Gfs (max / Min)
18 S
Gate Charge Qg
110 nC
Power Dissipation
2.7 W
Rise Time
50 ns
Tradename
MICROFOOT TrenchFET
Typical Turn-off Delay Time
600 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE
MICRO FOOT 1.6 x 1.6: 4-BUMP (2 x 2, 0.8 mm PITCH)
Notes (Unless otherwise specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are 95.5 Sn/3.8 Ag/0.7 Cu.
3. Non-solder mask defined copper landing pad.
4. The flat side of wafers is oriented at the bottom.
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63909.
Document Number: 63909
S12-2180-Rev. A, 10-Sep-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dim.
A
A
A
D
E
S
b
e
1
2
e
Recommended Land
Mark on Backside of Die
8425
XXX
For technical questions, contact:
0.550
0.260
0.290
0.370
1.520
1.520
0.750
0.370
e
Min.
This document is subject to change without notice.
Millimeters
4 x Ø 0.30
Note 3
Solder Mask Ø
a
b Diamerter
0.600
0.290
0.310
0.410
1.600
1.600
0.850
0.380
Max.
pmostechsupport@vishay.com
A
~
A
A
0.31
~
2
1
0.40
E
Silicon
e
D
0.0216
0.0102
0.0114
0.0146
0.0598
0.0598
0.0295
0.0146
Min.
S
Inches
Bump Note 2
Vishay Siliconix
S
e
www.vishay.com/doc?91000
Si8425DB
0.0236
0.0114
0.0122
0.0161
0.0630
0.0630
0.0335
0.0150
Max.
www.vishay.com
7