SI8817DB-T2-E1 Vishay/Siliconix, SI8817DB-T2-E1 Datasheet

SI8817DB-T2-E1

Manufacturer Part Number

SI8817DB-T2-E1

Description

MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III

Manufacturer

Vishay/Siliconix

Datasheet

1.SI8817DB-T2-E1.pdf (9 pages)

Specifications of SI8817DB-T2-E1

Product Category

MOSFET

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

- 2.9 A

Resistance Drain-source Rds (on)

76 mOhms at 4.5 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

MICRO FOOT 0.8 x 0.8

Forward Transconductance Gfs (max / Min)

5 S

Gate Charge Qg

7.5 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

0.9 W

Tradename

P-Channel Gen III

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI8817DB-T2-E1

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI8817DB-T2-E1

Quantity:

3 000

Company:

H&T Electronics

Part Number:

SI8817DB-T2-E1

Quantity:

70 000

Current page: 1 of 9
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Notes:

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on T

Document Number: 62759

S12-1858-Rev. A, 06-Aug-12

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Ordering Information: Si8817DB-T2-E1 (Lead (Pb)-free and Halogen-free)

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Package Reflow Conditions

- 20

(V)

Device Marking: A F

Bump Side View

= 25 °C.

0.076 at V

0.100 at V

0.145 at V

0.320 at V

DS(on)

MICRO FOOT

xxx = Date/Lot Traceability Code

() Max.

= - 4.5 V

= - 2.5 V

= - 1.8 V

= - 1.5 V

= 150 °C)

Backside View

P-Channel 20 V (D-S) MOSFET

For technical questions, contact:

- 2.9

- 2.5

- 2.1

- 0.5

(A)

This document is subject to change without notice.

a, e

= 25 °C, unless otherwise noted)

IR/Convection

7.5 nC

(Typ.)

VPR

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

pmostechsupport@vishay.com

FEATURES

APPLICATIONS

• Small 0.8 mm x 0.8 mm outline area

• Low 0.4 mm max. profile

• Battery management

• DC/DC converters

•

Symbol

TrenchFET

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Load switches and chargers switches

For smart phones and tablet PCs

, T

stg

Power MOSFET

- 55 to 150

- 2.9

- 2.3

- 2.1

- 1.7

- 0.7

- 0.4

Limit

0.9

0.6

0.5

0.3

- 20

- 15

260

± 8

Vishay Siliconix

www.vishay.com/doc?91000

Si8817DB

P-Channel MOSFET

www.vishay.com

Unit

°C

Related parts for SI8817DB-T2-E1

SI8817DB-T2-E1 Summary of contents

Page 1

... Device Marking xxx = Date/Lot Traceability Code Ordering Information: Si8817DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si8817DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient c, d Maximum Junction-to-Ambient Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 185 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. ...

Page 3

... dI/dt = 100 A/µ ° pmostechsupport@vishay.com This document is subject to change without notice. Si8817DB Vishay Siliconix Min. Typ. Max. Unit - 0 0. www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... Si8817DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted thru 0.0 0.5 1.0 1.5 2 Drain-to-Source Voltage (V) DS Output Characteristics Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...

Page 5

... BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient pmostechsupport@vishay.com This document is subject to change without notice. Si8817DB Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...

Page 6

... Si8817DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 2.5 2.0 1.5 1.0 0.5 0 100 T - Case Temperature (°C) C Current Derating* Note: When mounted on 1" x 1" FR4 with full copper. * The power dissipation P is based J(max.) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH 0.1 1 Square Wave Pulse Duration ( 0.1 1 Square Wave Pulse Duration (s) pmostechsupport@vishay.com This document is subject to change without notice. Si8817DB Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 185 ° ...

Page 8

... Si8817DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT 0 0.8 mm: 4-BUMP ( 0.4 mm PITCH) xxx A F Mark on Backside of die Recommended Land Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm. ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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