SIHB24N65E-GE3 Vishay/Siliconix, SIHB24N65E-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIHB24N65E-GE3
• Description: MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB24N65E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24 A
• Resistance Drain-source Rds (on): 145 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 69 ns
• Forward Transconductance Gfs (max / Min): 7.1 S
• Gate Charge Qg: 81 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 84 ns
• Typical Turn-off Delay Time: 70 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-1716-Rev. E, 16-Jul-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
Fig. 3 - Typical Transfer Characteristics
TOP 15 V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T
TOP
J
= 150 °C
14 V
13 V
12 V
11 V
10 V
V
V
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15 V
14 V
13 V
12 V
5
5
DS
V
GS
5
DS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
10
= 25 °C
10
T
J
= 25 °C
15
15
15
T
20
20
J
10 V
5 V
= 150 °C
11 V
9 V
9 V
8 V
5 V
For technical questions, contact:
20
25
25
25
30
30
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1000
Fig. 4 - Normalized On-Resistance vs. Temperature
100
2.5
1.5
0.5
10
24
20
16
12
3
2
1
0
1
8
4
0
- 60 - 40 - 20 0
0
0
www.vishay.com/doc?91000
I
D
= 12 A
100
V
C
DS
T
30
rss
Q
J
, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
C
g
C
, Total Gate Charge (nC)
oss
iss
200
20 40 60 80 100 120 140 160
60
V
C
C
C
GS
iss
rss
oss
300
= 0 V, f = 1 MHz
= C
= C
= C
V
gs
GS
gd
90
ds
V
V
V
+ C
+ C
= 10 V
400
DS
DS
DS
Vishay Siliconix
SiHB24N65E
Document Number: 91477
gd
= 520 V
= 335 V
= 130 V
gd
, C
120
ds
500
Shorted
600
150