SIHB30N60E-GE3 Vishay/Siliconix, SIHB30N60E-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIHB30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 36 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 32 ns
• Typical Turn-off Delay Time: 63 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-3103-Rev. E, 24-Dec-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 2 - Typical Output Characteristics, T
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
40
80
60
20
Fig. 1 - Typical Output Characteristics, T
0
0
0
0
Fig. 3 - Typical Transfer Characteristics
www.vishay.com
T
5
5
J
= 25 °C
V
V
DS
DS
5
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
GS
10
10
, Gate-to-Source Voltage (V)
10
T
J
= 25 °C
15
15
T
J
= 150 °C
T
J
15
= 150 °C
20
20
For technical questions, contact:
BOTTOM 5.0 V
TOP
TOP
BOTTOM 5.0 V
C
= 150 °C
25
25
20
5 V
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
C
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
= 25 °C
30
30
25
3
[e-mail]
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10 000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
10
1
24
20
16
12
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
8
4
0
www.vishay.com/doc?91000
- 60 - 40 - 20
0
0
I
D
C
25
= 15 A
100
iss
V
C
DS
T
rss
Q
J
0
V
I
g
- Drain-to-Source Voltage (V)
D
- Junction Temperature (°C)
GS
50
- Total Gate Charge (nC)
200
= 15 A
C
= 10 V
20
oss
40
V
C
C
C
GS
75
iss
rss
oss
300
= 0 V, f = 1 MHz
= C
= C
Vishay Siliconix
60
= C
SiHB30N60E
Document Number: 91453
V
DS
gs
gd
ds
= 120 V
80 100 120 140 160
100
+ C
+ C
400
gd
gd
x C
V
DS
V
DS
125
ds
= 300 V
500
= 480 V
shorted
150
600