SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

SiZ902DT
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted)
b
V
Symbol
V
R
V
GS(th)
I
This document is subject to change without notice.
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
oss
DS
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
New Product
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
= 15 V, V
= 15 V, V
= 15 V, V
V
= 30 V, V
= 30 V, V
= 15 V, V
V
V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
V
V
V
V
DS
V
V
DS
DS
GS
DS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
= 0 V, V
= V
= V
= 4.5 V, I
= 10 V, I
= 10 V, I
= 0 V, I
= 0 V, I
= 30 V, V
= 30 V, V
5 V, V
5 V, V
= 4.5 V, I
= 10 V, I
= 10 V, I
I
I
I
I
D
D
D
D
Channel-1
Channel-2
Channel-1
Channel-2
f = 1 MHz
GS
Test Conditions
GS
GS
GS
= 250 µA
= 250 µA
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
, I
, I
= 4.5 V, I
= 10 V, I
= 4.5 V, I
= 0 V, T
= 0 V, T
D
D
= 10 V, I
GS
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
D
D
GS
GS
D
D
D
= 250 µA
= 250 µA
D
D
GS
GS
D
= 250 µA
= 250 µA
= 13.8 A
= 13.8 A
= 12.6 A
= ± 20 V
= 20 A
= 20 A
= 10 V
= 10 V
= 20 A
= 0 V
= 0 V
D
J
J
D
D
D
= 55 °C
= 55 °C
= 13.8 A
= 13.8 A
= 20 A
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
0.4
0.3
30
30
20
20
1
1
S11-2380 Rev. B, 28-Nov-11
Document Number: 63465
www.vishay.com/doc?91000
0.0053 0.0064
0.0120 0.0145
0.0068 0.0083
0.010
2600
Typ.
- 4.6
790
190
485
215
6.8
2.6
8.1
1.9
6.5
1.5
33
33
- 5
47
63
76
14
43
21
2
± 100
± 100
0.012
Max.
2.2
2.2
11
21
65
32
1
1
5
5
4
3
mV/°C
Unit
nA
µA
nC
pF


V
V
A
S