SiHF30N60E-E3 Vishay/Siliconix, SiHF30N60E-E3 Datasheet - Page 6
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SiHF30N60E-E3
Manufacturer Part Number
SiHF30N60E-E3
Description
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHF30N60E-E3.pdf
(8 pages)
Specifications of SiHF30N60E-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220FP-3
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
85 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
37 W
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIHF30N60E-E3
Manufacturer:
VISHAY
Quantity:
1 400
Part Number:
SIHF30N60E-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91454.
S13-0059-Rev. F, 21-Jan-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
For technical questions, contact:
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 18 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
-
+
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
6
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
hvm@vishay.com
D =
-
g
www.vishay.com/doc?91000
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
Document Number: 91454
SiHF30N60E