SIRA02DP-T1-GE3 Vishay/Siliconix, SIRA02DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIRA02DP-T1-GE3
• Description: MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA02DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 2 mOhms at 10 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Power Dissipation: 50 W
• Part # Aliases: SIRA02DP-GE3

SiRA02DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63773.
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.1
1
0.0001
0.0001
1
Single Pulse
0.02
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.05
0.2
0.1
0.001
Single Pulse
For technical questions, contact:
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
0.001
0.01
This document is subject to change without notice.
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
New Product
0.1
[e-mail]
0.01
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
- T
t
A
1
= P
t
2
DM
S12-3075-Rev. B, 24-Dec-12
100
Z
thJA
Document Number: 63773
thJA
www.vishay.com/doc?91000
t
t
1
2
(t)
= 70 °C/W
1000
1