SIR878ADP-T1-GE3 Vishay/Siliconix, SIR878ADP-T1-GE3 Datasheet - Page 12

• Manufacturer Part Number: SIR878ADP-T1-GE3
• Description: MOSFET 100V 14mOhm@10V 40A N-Ch MV T-FET
• Manufacturer: Vishay/Siliconix

Specifications of SIR878ADP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Resistance Drain-source Rds (on): 14 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 44 S
• Gate Charge Qg: 13.9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 44.5 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: SIR878ADP-GE3

RECOMMENDED MINIMUM PADS FOR PowerPAK
Document Number: 72599
Revision: 21-Jan-08
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0.024
(0.61)
0.026
(0.66)
(1.27)
0.050
0.032
(0.82)
Recommended Minimum Pads
Dimensions in Inches/(mm)
®
SO-8 Single
0.260
(6.61)
0.150
(3.81)
Application Note 826
(1.02)
0.040
Vishay Siliconix
www.vishay.com
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