SIHG30N60E-GE3 Vishay/Siliconix, SIHG30N60E-GE3 Datasheet

SIHG30N60E-GE3

Manufacturer Part Number

SIHG30N60E-GE3

Description

MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHG30N60E-GE3.pdf (8 pages)

Specifications of SIHG30N60E-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

600 V

Continuous Drain Current

29 A

Resistance Drain-source Rds (on)

125 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-247AC-3

Fall Time

36 ns

Forward Transconductance Gfs (max / Min)

5.4 S

Gate Charge Qg

130 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

250 W

Rise Time

32 ns

Typical Turn-off Delay Time

63 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SIHG30N60E-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SIHG30N60E-GE3

Company:

H&T Electronics

Part Number:

SIHG30N60E-GE3

Quantity:

5 000

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

S12-3103-Rev. E, 24-Dec-12

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

 I

TO-247AC

= 50 V, starting T

max. at 25 °C ()

, dI/dt = 100 A/μs, starting T

max.

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 28.2 mH, R

= 150 °C)

= 10 V

= 25 °C.

N-Channel MOSFET

E Series Power MOSFET

Single

For technical questions, contact:

650

130

= 25 , I

= 25 °C, unless otherwise noted)

0.125

at 10 V

= 7 A.

for 10 s

= 125 °C

TO-247AC

SiHG30N60E-E3

SiHG30N60E-GE3

= 100 °C

= 25 °C

FEATURES

• Low Figure-of-Merit (FOM) R

• Low Input Capacitance (C

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions please

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

• Industrial

• Battery Chargers

• Renewable Energy

see

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- LED Lighting

- Welding

- Induction Heating

- Motor Drives

- Solar (PV Inverters)

hvm@vishay.com

www.vishay.com/doc?99912

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

iss

- 55 to + 150

)

LIMIT

300

± 20

600

690

250

x Q

Vishay Siliconix

SiHG30N60E

Document Number: 91455

UNIT

W/°C

V/ns

°C

Related parts for SIHG30N60E-GE3

SIHG30N60E-GE3 Summary of contents

Page 1

... Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting - LED Lighting S • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters) TO-247AC SiHG30N60E-E3 SiHG30N60E-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° 125 ° ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG30N60E Vishay Siliconix MAX. UNIT 62 °C/W 0.5 MIN. TYP. MAX. 600 - - = 250 μA - 0.64 - 2 ± 100 ...

Page 3

... V 1.5 9.0 V 8.0 V 7.0 V 6.0 V 1.0 BOTTOM 5.0 V 0.5 0 150 °C Fig Normalized On-Resistance vs. Temperature C 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG30N60E Vishay Siliconix ° 150 ° Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...

Page 4

... V DS 15.0 10.0 5 125 150 Fig Maximum Drain Current vs. Case Temperature 1.2 1.4 1.6 Fig Temperature vs. Drain-to-Source Voltage 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG30N60E Vishay Siliconix Operation in this area limited by R DS(on) I Limited DM 100 μ ° 150 ° BVDSS Limited 1 10 ...

Page 5

... Fig Unclamped Inductive Waveforms Fig Basic Gate Charge Waveform + For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG30N60E Vishay Siliconix 0 Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µF ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG30N60E Vishay Siliconix + + Document Number: 91455 ...

Page 7

TO-247AC (High Voltage E MILLIMETERS DIM. MIN. ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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