SIR401DP-T1-GE3 Vishay/Siliconix, SIR401DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR401DP-T1-GE3
• Description: MOSFET -20V 3.2mOhm@10V 50A P-Ch G-III
• Manufacturer: Vishay/Siliconix

Specifications of SIR401DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 50 A
• Resistance Drain-source Rds (on): 3.2 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 100 ns
• Forward Transconductance Gfs (max / Min): 77 S
• Gate Charge Qg: 310 nC
• Power Dissipation: 39 W
• Rise Time: 130 ns
• Typical Turn-off Delay Time: 300 ns
• Part # Aliases: SIR401DP-GE3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63661
S12-0334-Rev. A, 13-Feb-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.007
0.006
0.005
0.004
0.003
0.002
80
64
48
32
16
10
0
8
6
4
2
0
0.0
0
0
I
D
= 10 A
V
DS
On-Resistance vs. Drain Current
0.5
= 5 V
16
42
V
V
GS
DS
V
Output Characteristics
GS
- Drain-to-Source Voltage (V)
= 10 V thru 3 V
Q
g
= 2.5 V
- Total Gate Charge (nC)
I
D
Gate Charge
1.0
32
- Drain Current (A)
84
V
DS
V
= 10 V
GS
= 4.5 V
126
1.5
48
V
V
V
V
GS
GS
GS
DS
= 2 V
= 1 V
= 10 V
= 15 V
168
2.0
64
This document is subject to change without notice.
210
2.5
80
New Product
12 000
9600
7200
4800
2400
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
T
I
C
On-Resistance vs. Junction Temperature
D
C
rss
- 25
= 15 A
= 125 °C
0.6
T
4
C
V
V
= 25 °C
GS
Transfer Characteristics
0
DS
T
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
oss
25
Capacitance
1.2
8
C
50
iss
1.8
12
75
Vishay Siliconix
T
C
V
www.vishay.com/doc?91000
= - 55 °C
GS
100
= 10 V
SiR401DP
2.4
16
V
GS
125
www.vishay.com
= 2.5 V
3.0
150
20
3