BZX100A T/R NXP Semiconductors, BZX100A T/R Datasheet - Page 4
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BZX100A T/R
Manufacturer Part Number
BZX100A T/R
Description
Zener Diodes GP ZENER DIODE
Manufacturer
NXP Semiconductors
Datasheet
1.BZX100A_TR.pdf
(10 pages)
Specifications of BZX100A T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
100 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
138 mV/k
Power Dissipation
1 W
Maximum Reverse Leakage Current
0.2 uA
Maximum Zener Impedance
700 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-90
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BZX100A,115
NXP Semiconductors
7. Characteristics
BZX100A_1
Product data sheet
Fig 2. Non-repetitive peak reverse power dissipation
P
(W)
ZSM
10
10
10
1
3
2
10
T
as a function of pulse duration; maximum
values
j
= 25 C (prior to surge)
5
10
Table 7.
T
[1]
4
Symbol
V
V
r
I
S
C
R
j
dif
F
Z
Z
d
= 25 C unless otherwise specified.
Pulse test: t
10
Characteristics
Parameter
forward voltage
working voltage
differential resistance
reverse current
temperature coefficient
diode capacitance
3
p
t
p
300 s;
006aab048
(s)
10
Rev. 01 — 30 May 2007
2
0.02.
Fig 3. Forward current as a function of forward
(mA)
Conditions
I
I
I
I
V
I
f = 1 MHz;
V
I
F
F
Z
Z
Z
F
300
200
100
R
R
= 10 mA
= 100 mA
= 1 mA
= 1 mA
= 1 mA
0
= 76 V
= 0 V
T
voltage; typical values
0.6
j
= 25 C
0.7
[1]
0.8
Min
-
-
95
-
-
-
-
Typ
-
-
-
-
-
138
-
Single Zener diode
0.9
BZX100A
© NXP B.V. 2007. All rights reserved.
006aab049
V
F
(V)
Max
0.9
1.1
105
700
0.2
-
70
1.0
Unit
V
V
V
mV/K
pF
A
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