PSMN012-25YLC,115 NXP Semiconductors, PSMN012-25YLC,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN012-25YLC,115
• Description: MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-25YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Resistance Drain-source Rds (on): 12.6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 26 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN012-25YLC
Product data sheet
Fig 3.
Fig 4.
(A)
I
10
D
10
10
10
-1
3
2
1
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Limit R
(A)
I
AL
10
10
10
-1
2
1
10
DSon
All information provided in this document is subject to legal disclaimers.
-3
= V
1
DS
/ I
Rev. 1 — 25 October 2011
10
D
-2
10
-1
(1)
(2)
DC
1
003aag261
t
AL
(ms)
10
10
PSMN012-25YLC
V
DS
t
100 μ s
1 ms
10 ms
(V)
100 ms
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003aag262
10
2
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