PSMN012-25YLC,115 NXP Semiconductors, PSMN012-25YLC,115 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PSMN012-25YLC,115
Manufacturer Part Number
PSMN012-25YLC,115
Description
MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN012-25YLC115.pdf
(15 pages)
Specifications of PSMN012-25YLC,115
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
33 A
Resistance Drain-source Rds (on)
12.6 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Power Dissipation
26 W
Factory Pack Quantity
1500
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN012-25YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.05
δ = 0.5
0.1
Thermal characteristics
0.2
0.02
single shot
Parameter
thermal resistance from
junction to mounting base
N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 1 — 25 October 2011
Conditions
see
Figure 5
10
-3
10
-2
PSMN012-25YLC
Min
-
10
P
-1
tp
Typ
5.66
T
t
p
© NXP B.V. 2011. All rights reserved.
003aag248
(s)
δ =
Max
5.83
T
tp
t
1
Unit
K/W
5 of 15