SIHS36N50D-E3 Vishay/Siliconix, SIHS36N50D-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHS36N50D-E3
• Description: MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHS36N50D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 36 A
• Resistance Drain-source Rds (on): 130 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: Super-247
• Fall Time: 68 ns
• Forward Transconductance Gfs (max / Min): 12.8 S
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 446 W
• Rise Time: 89 ns
• Typical Turn-off Delay Time: 79 ns

S12-1457-Rev. A, 18-Jun-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
1000
100
0.1
100
10
0.1
10
1
1
0.2
1
* V
Fig. 8 - Maximum Safe Operating Area
Operation in this Area
Limited by R
T
T
Single Pulse
T
GS
C
J
J
0.01
0.4
= 150 °C
0.1
= 150 °C
= 25 °C
> minimum V
www.vishay.com
1
0.0001
V
Limited by R
V
SD
DS
0.2
0.05
0.1
Duty Cycle = 0.5
, Source-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
DS(on)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
0.02
GS
0.8
DS(on)
T
J
at which R
= 25 °C
Single Pulse
*
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
I
1
DM
BVDSS Limited
= Limited
100
DS(on)
1.2
0.001
V
For technical questions, contact:
is s
GS
1.4
= 0 V
10 ms
1 ms
100 μs
1000
1.6
Pulse Time (s)
0.01
4
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
10
40
20
30
0
-
25
6
www.vishay.com/doc?91000
0
- 40 - 20
T
50
J
T
, Junction Temperature (°C)
0.1
J
, Case Temperature (°C)
0
20 40 60 80 100 120 140
75
100
Vishay Siliconix
SiHS36N50D
Document Number: 91514
125
1
150
1
6
0