PSMN8R0-40BS,118 NXP Semiconductors, PSMN8R0-40BS,118 Datasheet - Page 11
PSMN8R0-40BS,118
Manufacturer Part Number
PSMN8R0-40BS,118
Description
MOSFET N-CH 40 V 7.6 MOHM MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN8R0-40BS118.pdf
(14 pages)
Specifications of PSMN8R0-40BS,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
36 V
Gate-source Breakdown Voltage
4.8 V
Continuous Drain Current
77 A
Resistance Drain-source Rds (on)
7.6 mOhms
Mounting Style
Through Hole
Package / Case
D2PAK
Power Dissipation
86 W
Factory Pack Quantity
800
NXP Semiconductors
8. Revision history
Table 7.
PSMN8R0-40BS
Product data sheet
Document ID
PSMN8R0-40BS v.2
Modifications:
PSMN8R0-40BS v.1
Revision history
20120302
20111021
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 2 March 2012
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Change notice
-
-
PSMN8R0-40BS
Supersedes
PSMN8R0-40BS v.1
-
© NXP B.V. 2012. All rights reserved.
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