PSMN8R0-40BS,118 NXP Semiconductors, PSMN8R0-40BS,118 Datasheet - Page 11

• Manufacturer Part Number: PSMN8R0-40BS,118
• Description: MOSFET N-CH 40 V 7.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 36 V
• Gate-source Breakdown Voltage: 4.8 V
• Continuous Drain Current: 77 A
• Resistance Drain-source Rds (on): 7.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
8. Revision history
Table 7.
PSMN8R0-40BS
Product data sheet
Document ID
PSMN8R0-40BS v.2
Modifications:
PSMN8R0-40BS v.1
Revision history
20120302
20111021
Release date
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 2 March 2012
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Change notice
-
-
PSMN8R0-40BS
Supersedes
PSMN8R0-40BS v.1
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© NXP B.V. 2012. All rights reserved.
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