PSMN8R0-40BS,118 NXP Semiconductors, PSMN8R0-40BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN8R0-40BS,118
• Description: MOSFET N-CH 40 V 7.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 36 V
• Gate-source Breakdown Voltage: 4.8 V
• Continuous Drain Current: 77 A
• Resistance Drain-source Rds (on): 7.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN8R0-40BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10
10
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
0.2
0.1
0.05
0.02
δ = 0.5
Thermal characteristics
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 2 March 2012
Conditions
see
minimum footprint; mounted on a
printed circuit board
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Figure 4
10
-3
10
-2
PSMN8R0-40BS
Min
-
-
P
10
-1
t
p
Typ
1.2
50
T
t
p
© NXP B.V. 2012. All rights reserved.
(s)
δ =
003aad068
Max
1.74
-
T
t
p
t
1
Unit
K/W
K/W
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