PSMN8R0-40BS,118 NXP Semiconductors, PSMN8R0-40BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN8R0-40BS,118
• Description: MOSFET N-CH 40 V 7.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 36 V
• Gate-source Breakdown Voltage: 4.8 V
• Continuous Drain Current: 77 A
• Resistance Drain-source Rds (on): 7.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN8R0-40BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
10
20
15
10
GS
8
6
4
2
0
5
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) =
5
5.5
50
V
10
DS
= 20 V
6
15
100
7
20
All information provided in this document is subject to legal disclaimers.
I
003aad059
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D
Q
(A)
G
10
8
20
(nC)
150
25
Rev. 2 — 2 March 2012
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
10
(pF)
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
PSMN8R0-40BS
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aaa508
003aad063
C
(V)
C
C
oss
iss
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10
2
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