PSMN8R0-40BS,118 NXP Semiconductors, PSMN8R0-40BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN8R0-40BS,118
• Description: MOSFET N-CH 40 V 7.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 36 V
• Gate-source Breakdown Voltage: 4.8 V
• Continuous Drain Current: 77 A
• Resistance Drain-source Rds (on): 7.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN8R0-40BS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
80
60
40
20
I
S
0
0
All information provided in this document is subject to legal disclaimers.
0.3
Rev. 2 — 2 March 2012
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
175 °C
0.6
0.9
T
j
= 25 °C
003aad061
V
SD
(V)
1.2
PSMN8R0-40BS
© NXP B.V. 2012. All rights reserved.
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