IXFN210N30P3 Ixys, IXFN210N30P3 Datasheet

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IXFN210N30P3

Manufacturer Part Number
IXFN210N30P3
Description
MOSFET N-Channel
Manufacturer
Ixys
Datasheet

Specifications of IXFN210N30P3

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
192 A
Resistance Drain-source Rds (on)
14.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-227B
Fall Time
13 ns
Gate Charge Qg
268 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 kW
Rise Time
25 ns
Typical Turn-off Delay Time
94 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN210N30P3
Manufacturer:
MITSUBISHI
Quantity:
87
Polar3
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiPerFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
DSS
, V
GS
, I
, V
DD
D
D
D
= 3mA
≤ V
GS
= 8mA
= 105A, Note 1
DS
= 0V
t = 1s
DSS
= 0V
, T
TM
J
GS
Note 2, T
≤ 150°C
= 1MΩ
Advance Technical Information
J
= 125°C
IXFN210N30P3
JM
300
2.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
1500
2500
3000
Typ.
192
300
300
±20
±30
550
105
150
300
260
35
30
4
±200 nA
Nm/lb.in.
Nm/lb.in.
14.5 mΩ
Max.
1.5 mA
5.0
50 μA
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
miniBLOC, with Aluminium Nitride
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Rectifier
Low R
Low Drain-to-Tab Capacitance
Low Package Inductance
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Isolation
Easy to Mount
Space Savings
DS(on)
DSS
E153432
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
D = Drain
S
14.5mΩ Ω Ω Ω Ω
300V
192A
250ns
D
DS100482(06/12)
S

Related parts for IXFN210N30P3

IXFN210N30P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 105A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN210N30P3 Maximum Ratings 300 = 1MΩ 300 GS ±20 ±30 192 550 JM 105 4 ≤ 150° 1500 -55 ... +150 150 -55 ... +150 300 ...

Page 2

... DSS D 72 0.05 Characteristic Values Min. Typ. JM 4.1 28 measurement. DSS 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN210N30P3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.083 °C/W °C/W Max. 210 A 840 A 1.5 ...

Page 3

... Value vs. D 200 180 T = 125ºC J 160 140 120 100 25º 200 250 300 -50 IXFN210N30P3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V -50 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 0 1000 C iss 100 C oss rss 0 IXFN210N30P3 Fig. 8. Transconductance 40ºC J 25º 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 150V 105A 10mA 120 150 180 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFN210N30P3 0.1 1 IXYS REF: F_210N30P3(K9) 6-22-12 10 ...

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