PMN35EN,115 NXP Semiconductors, PMN35EN,115 Datasheet - Page 5
PMN35EN,115
Manufacturer Part Number
PMN35EN,115
Description
MOSFET 30 V, 5.1 A N-CH TRENCH MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PMN35EN115.pdf
(15 pages)
Specifications of PMN35EN,115
Rohs
yes
Factory Pack Quantity
3000
NXP Semiconductors
7. Characteristics
Table 7.
PMN35EN
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
V
V
V
V
T
V
T
V
T
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 25 °C
= 25 °C
= 25 °C; I
= 1.3 A; V
= 250 µA; V
= 250 µA; V
= 30 V; V
= 30 V; V
= 10 V; I
= 15 V; I
= 15 V; f = 1 MHz; V
= 15 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 4.5 V; I
Rev. 1 — 20 July 2011
D
GS
D
D
D
D
D
GS
GS
GS
= 5.1 A
DS
GS
DS
DS
= 5.1 A; T
= 5.1 A; V
= 5.1 A; T
= 5.1 A; T
= 4.3 A; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 10 V; R
= V
= 0 V; T
= 0 V; T
GS
; T
j
= 25 °C
j
j
j
j
j
j
GS
GS
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 150 °C
= 25 °C
j
G(ext)
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 10 V;
= 0 V;
= 6 Ω;
30 V, 5.1 A N-channel Trench MOSFET
Min
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
1.5
-
-
-
-
25
39
32
14
6.2
0.9
1
334
81
40
4
15
53
24
0.75
PMN35EN
© NXP B.V. 2011. All rights reserved.
-
Max
-
2.5
1
10
100
100
31
48
43
-
9.3
-
-
-
-
-
-
-
-
1.2
Unit
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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