VS-FA38SA50LCP Vishay Semiconductors, VS-FA38SA50LCP Datasheet - Page 4

• Manufacturer Part Number: VS-FA38SA50LCP
• Description: MOSFET N-Chan 500V 38 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-FA38SA50LCP

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.13 Ohms
• Configuration: Single Dual Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Fall Time: 330 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 W
• Rise Time: 340 ns
• Factory Pack Quantity: 180
• Typical Turn-off Delay Time: 200 ns

FA38SA50LCP
Vishay Semiconductors
www.vishay.com
4
Fig. 7 - Typical Source Drain Diode Forward Voltage
1000
1000
100
100
0.1
10
10
1
1
10V
0.2
1
V
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
Fig. 9 - Basic Gate Charge Waveform
G
C
J
T = 150 C
J
= 25 C
= 150 C
0.4
OPERATION IN THIS AREA LIMITED
Q
V
V
SD
DS
GS
°
°
°
,Source-to-Drain Voltage (V)
10
, Drain-to-Source Voltage (V)
0.6
[e-mail], [e-mail],
Q
Charge
0.8
BY R
Q
T = 25 C
J
For technical questions within your region, please contact one of the following:
GD
G
100
DS(on)
1.0
°
1.2
10us
100us
1ms
10ms
1000
V
GS
1.4
= 0 V
10000
1.6
Power MOSFET, 38 A
[e-mail]
12 V
V
90%
0%
V
DS
GS
Fig. 11 - Switching Time Test Circuit
Fig. 12 - Switching Time Waveforms
R
GS
Pulse width
Duty factor
Fig. 10 - Gate Charge Test Circuit
G
Same type as D.U.T.
10 V
Current regulator
V
.2 µF
t
d(on)
GS
V
DS
3 mA
50 K
t
r
0.1 %
Current sampling resistors
1 µs
.3 µF
I
G
D.U.T.
R
Document Number: 94547
D
t
d(off)
D.U.T.
I
Revision: 11-May-10
D
t
f
+
-
+
-
V
V
DD
DS