VS-FA38SA50LCP Vishay Semiconductors, VS-FA38SA50LCP Datasheet - Page 7

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VS-FA38SA50LCP

Manufacturer Part Number
VS-FA38SA50LCP
Description
MOSFET N-Chan 500V 38 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-FA38SA50LCP

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38 A
Resistance Drain-source Rds (on)
0.13 Ohms
Configuration
Single Dual Source
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-227
Fall Time
330 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
500 W
Rise Time
340 ns
Factory Pack Quantity
180
Typical Turn-off Delay Time
200 ns
ORDERING INFORMATION TABLE
Document Number: 94547
Revision: 11-May-10
CIRCUIT CONFIGURATION
CIRCUIT
Single switch no diode
Dimensions
Packaging information
Device code
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1
2
3
4
5
6
7
8
F
1
CONFIGURATION CODE
-
-
-
-
-
-
-
-
A
2
Power MOSFET
Generation 3, MOSFET silicon, DBC construction
Current rating (38 = 38 A)
Single switch (see Circuit Configuration table)
SOT-227
Voltage rating (50 = 500 V)
Low charge
P = Lead (Pb)-free
CIRCUIT
LINKS TO RELATED DOCUMENTS
S
Power MOSFET, 38 A
38
3
S
4
A
5
G (2)
50
6
DiodesEurope@vishay.com
LC
7
www.vishay.com/doc?95036
www.vishay.com/doc?95037
CIRCUIT DRAWING
S (1-4)
D (3)
P
8
Vishay Semiconductors
FA38SA50LCP
Lead assignment
4
1
S
S
www.vishay.com
G
D
3
2
7

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