AUIRF7759L2TR1 International Rectifier, AUIRF7759L2TR1 Datasheet

no-image

AUIRF7759L2TR1

Manufacturer Part Number
AUIRF7759L2TR1
Description
MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRF7759L2TR1

Rohs
yes
Drain-source Breakdown Voltage
75 V
Continuous Drain Current
160 A
Resistance Drain-source Rds (on)
1.8 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Power Dissipation
125 W
Factory Pack Quantity
1000
www.irf.com
Applicable DirectFET® Outline and Substrate Outline 
HEXFET
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.
DirectFET®
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The
This HEXFET
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
V
V
I
I
I
I
I
P
P
P
E
I
E
T
T
T
Thermal Resistance
R
R
R
R
R
D
D
D
D
DM
AR
P
J
STG
DS
GS
D
D
D
AS
AR
θJA
θJA
θJA
θJ-Can
θJ-PCB
@ T
@ T
@ T
@ T
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
@T
@T
@T
SB
C
C
A
C
C
C
A
= 25°C
®
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
= 25°C
is a registered trademark of International Rectifier.
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
DirectFET®
Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
SC
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
fl
f
f
Ã
e
j
k
f
Parameter
Parameter
AUTOMOTIVE GRADE
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
M2
h
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
M4
e
Automotive DirectFET
D
AUIRF7759L2TR1
V
R
I
Q
G
D (Silicon Limited)
(BR)DSS
AUIRF7759L2TR
DS(on)
L4
g
Typ.
L8
See Fig.18a, 18b, 16, 17
12.5
–––
–––
–––
20
S
S
S
S
-55 to + 175
S
S
S
S
Max.
typ.
0.83
max.
160
113
375
640
125
257
270
±20
3.3
75
26
63
L6
D
®
Power MOSFET ‚
Max.
–––
–––
1.2
0.5
45
DirectFET
L8
®
1.8mΩ
2.3mΩ
200nC
ISOMETRIC
160A
75V
Units
Units
°C/W
W/°C
03/28/12
mJ
mJ
°C
W
V
A
A
1
The

Related parts for AUIRF7759L2TR1

AUIRF7759L2TR1 Summary of contents

Page 1

... M2 M4 Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited ™ h à Parameter AUIRF7759L2TR AUIRF7759L2TR1 Power MOSFET ‚ ® V 75V (BR)DSS R typ. 1.8mΩ DS(on) max. 2.3mΩ I 160A D (Silicon Limited) Q 200nC ...

Page 2

Static Characteristics @ T = 25°C (unless otherwise stated) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient ...

Page 3

... Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level ...

Page 4

TOP 100 BOTTOM 10 1 3.75V 0.1 ≤ 60μs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 125° ...

Page 5

1.0A 1 1.0mA ID = 250μA 1.0 0.5 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 7. Typical ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 1000 100 DC 1msec 10 1 10msec Tc = 25° 175°C Single Pulse 0 Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 250 96A 200 150 100 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature D.U.T ...

Page 8

... Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor Curent for HEXFET P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ ® Power MOSFETs G = GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET® assembly details and stencil and substrate design recommendations Automotive DirectFET® Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART ...

Page 10

... Automotive DirectFET® Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as AUIRF7759L2TR). For 1000 parts on 7" reel, order AUIRF7759L2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4000) TR1 OPTION (QTY 1000) METRIC IMPERIAL METRIC ...

Page 11

... Ordering Information Base part number Package Type AUIRF7759L2 DirectFET2 Large Can www.irf.com Standard Pack Complete Part Number Form Quantity Tape and Reel 4000 Tape and Reel 1000 AUIRF7759L2TR AUIRF7759L2TR1 11 ...

Page 12

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, ...

Related keywords