AUIRF7759L2TR1 International Rectifier, AUIRF7759L2TR1 Datasheet - Page 4

• Manufacturer Part Number: AUIRF7759L2TR1
• Description: MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
• Manufacturer: International Rectifier

Specifications of AUIRF7759L2TR1

• Rohs: yes
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Power Dissipation: 125 W
• Factory Pack Quantity: 1000

1000
4
0.01
1000
100
0.1
100
Fig 3. Typical On-Resistance vs. Gate Voltage
10
0.1
10
1
1
0.1
8
6
4
2
0
2
Fig 5. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
2
V DS = 25V
≤60μs PULSE WIDTH
2.5
V DS , Drain-to-Source Voltage (V)
4
V GS , Gate-to-Source Voltage (V)
V GS, Gate -to -Source Voltage (V)
6
3
≤ 60μs
Tj = 25°C
1
8
3.5
3.75V
10
PULSE WIDTH
4
12
T J = 25°C
4.5
T J = 125°C
10
TOP
BOTTOM
14
T J = 175°C
TJ = 25°C
TJ = -40°C
5
I D = 96A
16
5.5
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
18
100
20
6
Fig 4. Typical On-Resistance vs. Drain Current
Fig 6. Normalized On-Resistance vs. Temperature
1000
Fig 2. Typical Output Characteristics
1.95
1.85
1.75
1.65
2.5
2.0
1.5
1.0
0.5
100
10
1
-60
0.1
15
I D = 96A
V GS = 10V
T A = 25°C
TOP
BOTTOM
-20
V DS , Drain-to-Source Voltage (V)
30
T J , Junction Temperature (°C)
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
I D , Drain Current (A)
20
1
45
≤ 60μs
Tj = 175°C
3.75V
60
60
PULSE WIDTH
V GS = 7.0V
V GS = 10V
V GS = 8.0V
V GS = 15V
100
10
75
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140
90
180
100
105