AUIRF7759L2TR1 International Rectifier, AUIRF7759L2TR1 Datasheet - Page 5

• Manufacturer Part Number: AUIRF7759L2TR1
• Description: MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
• Manufacturer: International Rectifier

Specifications of AUIRF7759L2TR1

• Rohs: yes
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Power Dissipation: 125 W
• Factory Pack Quantity: 1000

Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
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600
500
400
300
200
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
14
12
10
0
8
6
4
2
0
Fig 7. Typical Threshold Voltage vs.
-75 -50 -25
0
0
I D = 96A
I D = 1.0A
ID = 1.0mA
ID = 250μA
50
50
Junction Temperature
I D ,Drain-to-Source Current (A)
Q G , Total Gate Charge (nC)
T J = 25°C
T J , Temperature ( °C )
0
100
100
V DS = 60V
V DS = 38V
VDS= 15V
25 50 75 100 125 150 175
V DS = 25V
20μs PULSE WIDTH
150
150
T J = 175°C
200
200
250
250
300
300
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
100
100
200
160
120
0.1
10
80
40
1
0
0.2
25
1
T J = 175°C
TJ = 25°C
TJ = -40°C
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
50
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
T C , Case Temperature (°C)
75
C rss
C iss
C oss
0.6
f = 1 MHZ
100
10
0.8
125
V GS = 0V
1.0
150
100
175
1.2
5