AUIRF7759L2TR1 International Rectifier, AUIRF7759L2TR1 Datasheet - Page 6

• Manufacturer Part Number: AUIRF7759L2TR1
• Description: MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
• Manufacturer: International Rectifier

Specifications of AUIRF7759L2TR1

• Rohs: yes
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Power Dissipation: 125 W
• Factory Pack Quantity: 1000

6
0.0001
10000
0.001
1000
1000
0.01
100
100
0.1
Fig 13. Maximum Safe Operating Area
0.1
0.1
10
10
10
1.0E-06
1
1
1E-006
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
V DS , Drain-to-Source Voltage (V)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Duty Cycle = Single Pulse
OPERATION IN THIS AREA LIMITED
BY R DS (on)
D = 0.50
0.10
0.05
0.02
0.01
0.20
DC
1
1E-005
0.10
0.05
0.01
1.0E-05
SINGLE PULSE
( THERMAL RESPONSE )
Fig 16. Typical Avalanche Current vs.Pulsewidth
10msec
1msec
10
100μsec
0.0001
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
100
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
tav (sec)
0.001
i/Ri
R
1
R
1
Fig 14. Maximum Avalanche Energy vs. Temperature
τ
2
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
τ
R
1.0E-03
1200
1000
2
2
R
800
600
400
200
2
0
25
R
τ
3
3
R
τ
0.01
3
3
Starting T J , Junction Temperature (°C)
50
τ
R
4
τ
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
4
4
τ
C
τ
75
Ri (°C/W) τi (sec)
0.10804
0.61403
0.45202
0.00001
1.0E-02
0.1
100
TOP
BOTTOM 96A
0.000171
0.053914
0.006099
0.036168
125
23.97A
I D
15.39A
150
1.0E-01
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