SI4412DY-E3 Vishay/Siliconix, SI4412DY-E3 Datasheet
SI4412DY-E3
Manufacturer Part Number
SI4412DY-E3
Description
MOSFET 30V 7A 2.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4412DY-E3.pdf
(8 pages)
Specifications of SI4412DY-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Resistance Drain-source Rds (on)
28 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
19 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
12 ns
Typical Turn-off Delay Time
38 ns
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70154
S09-0705-Rev. D, 27-Apr-09
Ordering Information: Si4412DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
V
DS
30
(V)
G
S
S
S
Si4412DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.042 at V
0.028 at V
1
2
3
4
R
DS(on)
J
a
Top View
N-Channel 30-V (D-S) Rated MOSFET
SO-8
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
a
A
= 25 °C, unless otherwise noted
I
± 7.0
± 5.8
D
(A)
T
T
T
T
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
•
• Compliant to RoHS Directive 2002/95/EC
Definition
TrenchFET
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
I
I
thJA
GS
DS
D
S
D
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
Limit
Limit
± 7.0
± 5.8
± 20
± 30
D
S
2.3
2.5
1.6
30
50
Vishay Siliconix
Si4412DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1
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