SI4412DY-T1-GE3 Vishay/Siliconix, SI4412DY-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI4412DY-T1-GE3
• Description: MOSFET 30V 7.0A 2.5W 28mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SI4412DY-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 28 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Factory Pack Quantity: 2500
• Part # Aliases: SI4412DY-GE3

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08