BSH203 T/R NXP Semiconductors, BSH203 T/R Datasheet - Page 5
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BSH203 T/R
Manufacturer Part Number
BSH203 T/R
Description
MOSFET TAPE7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSH203_TR.pdf
(7 pages)
Specifications of BSH203 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.47 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Fall Time
4.5 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
417 mW
Rise Time
4.5 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
45 ns
Part # Aliases
BSH203,215
Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-7
-6
-5
-4
-3
-2
-1
0
0
Gate-Source Voltage, VGS (V)
RD = 20 Ohms
VDD = 10 V
Tj = 25 C
0.5
1
Gate Charge, Qg (nC)
V
GS
1.5
= f(Q
G
2
)
2.5
BSH203
3
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
1
150 C
GS
= 0 V; parameter T
1.5
Product specification
Tj = 25 C
2
BSH203
BSH203
Rev 1.000
2.5
j