SI4430DY-E3 Vishay/Siliconix, SI4430DY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4430DY-E3
• Description: MOSFET 30V 23A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4430DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 15 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 105 ns

Si4430DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2-2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0.0
b
Parameter
0.5
V
a
a
DS
V
Output Characteristics
GS
a
- Drain-to-Source Voltage (V)
1.0
= 10 thru 4 V
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
1.5
2.0
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
3 V
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
R
Q
g
t
t
SD
t
rr
fs
gs
gd
r
G
f
g
2.5
3.0
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 15 V, V
F
V
= 24 V, V
V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
S
DS
GS
GS
DD
DD
DS
= 2.9 A, V
= 0 V, V
= V
w 5 V, V
= 24 V, V
= 10 V, I
= 15 V, I
= 15 V, R
= 15 V, R
= 4.5 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 4.5 V, I
= 0 V, T
D
GS
D
GS
GS
D
D
L
L
= 250 mA
= "20 V
= 23 A
= 15 W
= 15 W
= 17 A
= 23 A
= 10 V
= 0 V
= 0 V
J
G
D
= 55_C
60
50
40
30
20
10
= 23 A
= 6 W
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
Min
- Gate-to-Source Voltage (V)
1.7
1.0
30
1.5
T
C
25_C
2.0
0.0068
0.004
Typ
105
= 125_C
0.8
2.2
80
36
15
12
20
15
40
50
S-03662—Rev. C, 14-Apr-03
Document Number: 70852
2.5
Max
"100
0.008
160
1.2
3.7
55
30
23
60
80
3.0
1
5
- 55_C
3.5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
4.0