SI4836DY-E3 Vishay/Siliconix, SI4836DY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4836DY-E3
• Description: MOSFET 12V 13A 1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4836DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 115 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 41 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 190 ns

Si4836DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
60
50
40
30
20
10
0
0
V
GS
a
1
a
= 5 V thru 1.5 V
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
2
a
1 V
Symbol
R
V
3
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
4
V
V
I
DS
D
DS
≅ 1 A, V
I
F
= 9.6 V, V
V
= 6 V, V
V
5
V
V
= 2.9 A, dI/dt = 100 A/µs
V
V
V
DS
I
DS
V
V
DS
DS
S
GS
GS
GS
Test Conditions
DS
DD
= 2.9 A, V
= V
= 0 V, V
= 9.6 V, V
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
GEN
= 6 V, I
= 6 V, R
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
GS
D
GS
= 250 µA
D
D
D
L
GS
= 25 A
= 4.5 V
= ± 8 V
= 25 A
= 22 A
= 19 A
= 6 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 25 A
= 6 Ω
60
50
40
30
20
10
0
0
0.2
V
Min.
0.40
0.4
1.0
GS
Transfer Characteristics
30
- Gate-to-Source Voltage (V)
0.6
0.0025
0.0031
T
0.004
Typ.
0.56
C
190
115
6.6
9.1
1.6
80
51
35
41
60
S09-0221-Rev. E, 09-Feb-09
25 °C
0.8
= 125 °C
Document Number: 71692
1.0
± 100
0.003
0.004
0.005
Max.
290
175
1.1
2.7
75
55
65
90
1
5
- 55 °C
1.2
1.4
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
1.6