BUK7675-100A /T3 NXP Semiconductors, BUK7675-100A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK7675-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7675-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 0.075 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 99 W
• Rise Time: 39 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 26 ns
• Part # Aliases: BUK7675-100A,118

NXP Semiconductors
BUK7675-100A_2
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
60
50
40
30
20
10
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
2
GS
4
min
(V) =
8
typ
6
4
9
max
V
GS
8
10
V
DS
(V)
03nb31
03aa35
(V)
20
7.5
6.5
5.5
4.5
10
6
Rev. 02 — 31 July 2009
Fig 6.
Fig 8.
R
(m Ω )
DSon
g
(S)
fs
90
85
80
75
70
65
60
55
50
20
15
10
5
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
10
BUK7675-100A
20
15
30
V
© NXP B.V. 2009. All rights reserved.
GS
I
D
(V)
03nb30
03nb28
(A)
20
40
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