TS110-7UF STMicroelectronics, TS110-7UF Datasheet - Page 4

• Manufacturer Part Number: TS110-7UF
• Description: SCRs 700V High Surge 1.25A SCR 100uA
• Manufacturer: STMicroelectronics

Specifications of TS110-7UF

• Rohs: yes

Characteristics
4/11
Figure 3.
Figure 5.
Figure 7.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
0.10
0.01
1.5
1.0
0.5
0.0
1.0E-03
0.1
0
I
T(AV)
K=[Z
I [R
H
GK
(A)
th(j-a)
1.0E-02
] / I [
25
/R
H
Average and DC on-state current
versus lead temperature
(SMBflat-3L)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Relative variation of holding
current versus gate-cathode
resistance (typical values)
th(j-a)
R
GK
1.0E-01
= 220 ]
]
50
1.0E+00
R
1.0
GK
= 30°, 60°, 90°, 120°, 180°, DC
(k )
75
TO-92
1.0E+01
T
lead
1.0E+02
Copper surface
100
SMBflat-3L
area = 5cm²
(°C)
Doc ID 022271 Rev 2
t (s)
p
1.0E+03
10.0
125
Figure 4.
Figure 6.
Figure 8.
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10.00
1.00
0.10
0.01
-40
0
I
I
GT H L
T(AV)
I
0
H
dV/dt[R
TO-92
& I
, I , I
V
180-
GT
L
(A)
I
-20
GT
SMBF-3L
180-
, V
GK
25
Average and DC on-state current
versus ambient temperature
Relative variation of gate triggering
current and voltage, holding and
latching current versus T
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
GT
200
] / dV/dt[
0
[T ] /
TO-92
DC
j
SMBF-3L
DC
I
20
GT H L
R
50
GK
400
, I , I , V
T (°C)
j
R
=220 ]
T
40
GK
amb
(k )
GT
(°C)
75
600
60
[T =25°C]
j
80
100
800
V = 0.67 x V
j
D
100
T
j
= 125°C
DRM
TS110
120
1000
125