TS110-7UF STMicroelectronics, TS110-7UF Datasheet - Page 5

• Manufacturer Part Number: TS110-7UF
• Description: SCRs 700V High Surge 1.25A SCR 100uA
• Manufacturer: STMicroelectronics

Specifications of TS110-7UF

• Rohs: yes

TS110
Figure 9.
Figure 11. Surge peak on-state current versus
Figure 13. On-state characteristics (maximum
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100.0
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10.0
1.0
0.1
1
0
I
TSM
dV/dt[C
0.5
Typical value of dV/dt
V = 0.67 x V
Repetitive
D
T
I
TM
T
A
TO-92
=25 °C
j
T
= 125°C
(A)
20
J
=125°C
(A)
1.0
GK
DRM
40
T
Non repetitive
T
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
] / dV/dt[C
number of cycles
values)
j
initial=25 °C
J
=25°C
1.5
60
10
Number of cycles
2.0
80
GK
[C GK = 100 nF]
Repetitive
SMBF-3L
T
A
= 100 nF]
=25 °C
100
2.5
V
TM
120
(V)
3.0
140
100
= 25 V/µs
3.5
C
160
GK
(nF)
4.0
180
t =10ms
R
p
V
d
One cycle
T
Doc ID 022271 Rev 2
to
=200 m
j
max :
=0.9 V
4.5
200
1000
220
5.0
Figure 10. Relative variation of dV/dt immunity
Figure 12. Non-repetitive surge peak on-state
Figure 14. Thermal resistance junction to
10
1000
170
160
150
140
130
120
110
100
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
10
20
1
dV/dt[ ] / dV/dt[
0.01
0
I
R
TSM
Sinusoidal pulse with
width tp < 10 ms
th(j-a)
T
(A), I t (A s)
j
(°C/W)
40
2
versus junction temperature with
R
current, and corresponding values
of I
ambient versus copper surface
under anode (SMBflat-3L)
1
GK
2
2
T
t
j
= 220  (typical values)
0.10
=
125 °C
60
t (ms)
p
2
T (°C)
j
S(cm²)
]
80
Epoxy printed circuit board FR4
copper thickness = 35 µm
3
1.00
I
TSM
I²t
Characteristics
100
V = 0.67 x V
T
D
4
R
j
initial=25 °C
GK
= 220
120
DRM
10.00
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