SI3458DV-T1 Vishay/Siliconix, SI3458DV-T1 Datasheet - Page 7
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SI3458DV-T1
Manufacturer Part Number
SI3458DV-T1
Description
MOSFET 60V 3.2A 2W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI3458DV-T1.pdf
(9 pages)
Specifications of SI3458DV-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.2 A
Resistance Drain-source Rds (on)
0.1 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2 W
Rise Time
10 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
20 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3458DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
AN823
Vishay Siliconix
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
junction-to-foot thermal resistance, Rq
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted.
of the TSOP-6.
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r
www.vishay.com
2
Equivalent Steady State Performance—TSOP-6
DS(on)
Thermal Resistance Rq
with temperature (Figure 4).
thermal
3_C/s (max)
Table 1 shows the thermal performance
140 − 170_C
TABLE 1.
resistance,
jf
FIGURE 3. Solder Reflow Temperature and Time Durations
jf
. This parameter is
Maximum peak temperature at 240_C is allowed.
Rq
jc
,
30_C/W
Pre-Heating Zone
60-120 s (min)
or
the
1X4_C/s (max)
255 − 260_C
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
I
−25
D
Reflow Zone
GS
60 s (max)
= 6.1 A
10 s (max)
217_C
= 4.5 V
T
FIGURE 4. Si3434DV
0
J
− Junction Temperature (_C)
25
50
3-6_C/s (max)
75
Document Number: 71743
100
125
150
27-Feb-04