SI7415DN-T1 Vishay/Siliconix, SI7415DN-T1 Datasheet - Page 5

• Manufacturer Part Number: SI7415DN-T1
• Description: MOSFET 60V 5.7A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7415DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Resistance Drain-source Rds (on): 65 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 12 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET/PowerPAK
• Typical Turn-off Delay Time: 22 ns

PowerPAK
Document Number: 71656
Revison: 03-May-10
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
DIM.
A1
D1
D2
D3
D4
D5
E1
E2
E3
E4
K1
L1
W
M
D
H
A
b
c
E
e
K
L
θ
Notes:
1.
2
3.
4
1
®
Inch will govern
Dimensions exclusive of mold gate burrs
Dimensions exclusive of mold flash and cutting burrs
1212-8, (SINGLE/DUAL)
E1
2
E
MIN.
0.97
0.00
0.23
0.23
3.20
2.95
1.98
0.48
3.20
2.95
1.47
1.75
0.35
0.30
0.30
0.06
0.15
0°
W
8
5
L1
MILLIMETERS
0.125 TYP.
0.47 TYP.
0.34 TYP.
0.65 BSC
0.86 TYP.
2.3 TYP.
NOM.
1.04
0.30
0.28
3.30
3.05
2.11
3.30
3.05
1.60
1.85
0.41
0.43
0.13
0.25
-
-
-
-
Z
Detail Z
MAX.
A1
1.12
0.05
0.41
0.33
3.40
3.15
2.24
0.89
3.40
3.15
1.73
1.98
0.51
0.56
0.20
0.36
12°
-
2
0.038
0.000
0.009
0.009
0.126
0.116
0.078
0.019
0.126
0.116
0.058
0.069
0.014
0.012
0.012
0.002
0.006
MIN.
0°
H
Package Information
Backside View of Single Pad
Backside View of Dual Pad
H
H
0.0185 TYP.
0.090 TYP.
0.013 TYP.
0.034 TYP.
0.005 TYP.
0.026 BSC
E3
E3
INCHES
NOM.
0.041
0.012
0.011
0.130
0.120
0.083
0.130
0.120
0.063
0.073
0.016
0.017
0.005
0.010
E2
E2
D2
D1
E4
E4
-
-
-
-
Vishay Siliconix
K
K
L
L
www.vishay.com
2
3
4
2
3
4
1
1
MAX.
0.044
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.134
0.124
0.068
0.078
0.020
0.022
0.008
0.014
12°
-
1