SI4860DY-T1 Vishay/Siliconix, SI4860DY-T1 Datasheet - Page 7
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SI4860DY-T1
Manufacturer Part Number
SI4860DY-T1
Description
MOSFET 30V 16A 1.6W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4860DY-T1.pdf
(8 pages)
Specifications of SI4860DY-T1
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Resistance Drain-source Rds (on)
8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
12 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
46 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 416
Company:
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 945
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4860DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08