SI7445DP-T1 Vishay/Siliconix, SI7445DP-T1 Datasheet - Page 2
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SI7445DP-T1
Manufacturer Part Number
SI7445DP-T1
Description
MOSFET 20V 19A 5.4W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI7445DP-T1.pdf
(11 pages)
Specifications of SI7445DP-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
12 A
Resistance Drain-source Rds (on)
7.7 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO-8
Fall Time
45 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.9 W
Rise Time
45 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
400 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7445DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7445DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7445DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
50
40
30
20
10
b
0
0
V
GS
2
V
DS
a
a
= 5 V thru 2 V
Output Characteristics
- Drain-to-Source Voltage (V)
a
J
4
= 25 °C, unless otherwise noted
1.5 V
a
Symbol
6
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
8
I
V
D
V
DS
DS
≅ - 1.0 A, V
I
= - 15 V, V
F
10
= - 20 V, V
V
V
V
V
V
V
V
V
= - 4.3 A, dI/dt = 100 A/µs
V
DS
I
DS
GS
GS
GS
DS
S
DD
DS
DS
= - 4.3 A, V
Test Conditions
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 15 V, I
= - 20 V, V
= - 15 V, R
= 0 V, V
GS
GEN
GS
GS
, I
D
= - 5 V, I
= - 4.5 V, R
= 0 V, T
GS
GS
= - 250 µA
D
D
D
D
GS
GS
L
= - 4.5 V
= - 19 A
= ± 8 V
= - 19 A
= - 17 A
= - 10 A
= 15 Ω
= 0 V
= 0 V
J
D
= 70 °C
= - 19 A
g
50
40
30
20
10
= 6 Ω
0
0.0
V
- 0.45
GS
Min.
- 40
0.5
Transfer Characteristics
1
- Gate-to-Source Voltage (V)
25 °C
T
C
= 125 °C
0.0064
0.0078
0.0105
- 0.65
Typ.
16.5
400
190
S09-0270-Rev. D, 16-Feb-09
75
92
19
40
45
50
2
1.0
Document Number: 71626
0.0077
0.0094
0.0125
± 100
Max.
- 1.0
- 1.1
- 10
140
600
290
3.4
- 1
60
65
80
- 55 °C
1.5
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
2.0