BSP225 T/R NXP Semiconductors, BSP225 T/R Datasheet

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BSP225 T/R

Manufacturer Part Number
BSP225 T/R
Description
MOSFET P-CH DMOS 250V 225MA
Manufacturer
NXP Semiconductors
Datasheet
1.BSP225_TR.pdf (12 pages)

Specifications of BSP225 T/R

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.225 A
Configuration
Single Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Fall Time
108 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
1500 mW
Rise Time
108 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
185 ns
Part # Aliases
BSP225,115
Product specification
File under Discrete Semiconductors, SC13b
DATA SHEET
BSP225
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
April 1995

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BSP225 T/R Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 ...

Page 2

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor FEATURES Low R DS(on) Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, ...

Page 3

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GSO I drain current D I drain current DM P total power ...

Page 4

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GS(th) R drain-source ...

Page 5

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching time test circuit. 2 handbook, P tot (W) 1.6 1.2 0.8 0 100 Fig.4 Power derating curve. April 1995 V ...

Page 6

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1 handbook, halfpage I D (A) 0.8 0.6 0.4 0 Fig.6 Typical transfer characteristic 160 handbook, halfpage C (pF) 120 80 40 ...

Page 7

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1.1 handbook, halfpage k 1 0.9 0.8 0 Fig.10 Temperature coefficient of gate-source threshold voltage – ----------------------------------------------- - ; ...

Page 8

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) A UNIT ...

Page 9

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product ...

Page 10

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 10 Product specification BSP225 ...

Page 11

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor April 1995 NOTES 11 Product specification BSP225 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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