IRFP460PPBF Vishay/Siliconix, IRFP460PPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP460PPBF
• Description: MOSFET N-Chan 500V 20 Amp
• Manufacturer: Vishay/Siliconix

Specifications of IRFP460PPBF

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 0.27 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 58 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 280 W
• Rise Time: 59 ns
• Factory Pack Quantity: 500
• Typical Turn-off Delay Time: 110 ns

IRFP460, SiHFP460
Vishay Siliconix
www.vishay.com
4
91237_05
91237_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10 000
8000
6000
4000
2000
20
16
12
0
8
4
0
10
0
0
I
D
= 20 A
V
DS ,
40
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
= 100 V
80
V
C
C
C
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
DS
= C
= C
= 250 V
10
gs
gd
120
ds
C
1
+ C
+ C
C
rss
C
oss
V
iss
gd
gd
DS
For test circuit
see figure 13
, C
= 400 V
160
ds
Shorted
200
91237_07
91237_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
3
5
2
2
5
2
5
2
1
2
1
0.6
1
Fig. 8 - Maximum Safe Operating Area
150
2
0.8
°
V
V
C
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
1.0
25
10
T
T
Single Pulse
°
C
C
J
by R
1.2
= 150 °C
= 25 °C
2
DS(on)
1.4
5
10
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
1.6
2
2
V
GS
1.8
= 0 V
5
100
1
10
10
ms
2.0
ms
10
µs
µs
3