SI4940DY-T1 Vishay/Siliconix, SI4940DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4940DY-T1
• Description: MOSFET 40V 5.7A 2.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4940DY-T1

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.2 A
• Resistance Drain-source Rds (on): 36 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 15 ns

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 71649
S09-0704-Rev. D, 27-Apr-09
0.10
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.7 A
On-Resistance vs. Drain Current
0.2
= 20 V
5
2
V
SD
V
Q
GS
g
- Source-to-Drain Voltage (V)
10
I
- Total Gate Charge (nC)
0.4
D
= 4.5 V
- Drain Current (A)
Gate Charge
4
T
J
= 150 °C
15
0.6
6
20
0.8
T
V
GS
J
= 25 °C
8
25
= 10 V
1.0
10
30
1.2
0.10
0.08
0.06
0.04
0.02
0.00
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 5.7 A
I
D
C
= 10 V
= 3 A
8
2
rss
V
V
GS
0
T
DS
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25
Capacitance
16
4
C
50
C
I
Vishay Siliconix
D
oss
iss
= 5.7 A
24
6
75
Si4940DY
www.vishay.com
100
32
8
125
150
40
10
3